Method of etching semiconductor laser device having Al.sub.x Ga.

Details Method of etching semiconductor laser device having Al.sub.x Ga. Method of etching semiconductor laser device having Al.sub.x Ga.

1997-02-26

1999-03-30

Brown, Peter Toby

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 40, 438 41, 438706, 148DIG95, H01L 2100

Patent

active

058888446

ABSTRACT:
An (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure is etched using an SiCl.sub.4 or an SiCl.sub.4 /(He,Ne) plasma. The etching is carried out at 0.degree. to 80.degree. C. and at a plasma pressure below 1.33.times.10.sup.-1 Pa (1 mTorr). The etched surfaces are sufficiently smooth for the etching process to be used in the production of (Al,Ga)As/(Al,Ga,In)P semiconductor lasers.

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