Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-09-12
2006-09-12
Coleman, William David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S755000, C257SE21309
Reexamination Certificate
active
07105458
ABSTRACT:
The present invention is a method of producing semiconductor devices and an etching liquid with which the titanium nitride film can be removed without thinning of the CoSi layer. A hydrogen peroxide-water mixture is used for removal of the titanium nitride film in the method of producing semiconductor devices by cobalt salicide technology with titanium nitride as the cap film.
REFERENCES:
patent: 5776822 (1998-07-01), Fujii et al.
patent: 5834368 (1998-11-01), Kawaguchi et al.
patent: 5877085 (1999-03-01), Matsubara
patent: 5933757 (1999-08-01), Yoshikawa et al.
patent: 5981380 (1999-11-01), Trivedi et al.
patent: 6008141 (1999-12-01), Ibara et al.
patent: 6051496 (2000-04-01), Jang
patent: 6074960 (2000-06-01), Lee et al.
patent: 6136699 (2000-10-01), Inoue
patent: 6221764 (2001-04-01), Inoue
patent: 6245191 (2001-06-01), Derderian et al.
patent: 6277674 (2001-08-01), Wang et al.
patent: 6319801 (2001-11-01), Wake et al.
patent: 6335294 (2002-01-01), Agnello et al.
Goto et al., “Leakage Mechanism and Optimized Conditions of Co Salicide Process for Deep-Submicron CMOS Devices” IEDM Tech., Dig. 1995 IEEE, pp. 449.
Burdett James R.
Coleman William David
Venable
LandOfFree
Method of etching semiconductor devices using a hydrogen... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of etching semiconductor devices using a hydrogen..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching semiconductor devices using a hydrogen... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3527765