Method of etching, refilling and etching dielectric grooves for

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29571, 148 15, 156648, H01L 2176, H01L 2700

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active

043941966

ABSTRACT:
A method for manufacturing a semiconductor device comprising: (a) a step of forming at least one groove(s) at the predetermined portion(s) of a semiconductor substrate; (b) a step of depositing insulating material with a thickness larger than half the opening width of the groove on the whole surface of the semiconductor substrate including the groove to fill the groove with insulating material; and (c) a step of etching the insulating material layer by the thickness thereof on the semiconductor substrate excluding the groove to form a field region consisting of insulating material left at least in the groove.

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