Method of etching polysilicon using a thin oxide mask formed on

Details Method of etching polysilicon using a thin oxide mask formed on Method of etching polysilicon using a thin oxide mask formed on

1993-07-08

1996-05-07

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437191, 437228, 437239, H01L 21316, H01L 2144, H01L 21443

Patent

active

055146210

ABSTRACT:
A polysilicon layer is deposited on a gate insulating film covering the surface of a semiconductor substrate, and thereafter the polysilicon layer is subjected to an impurity doping process in an oxidization atmosphere with heating, to reduce the resistance of the polysilicon layer, and to oxidize the surface of the polysilicon layer and form a silicon oxide film. The silicon oxide film is selectively etched to leave an etching mask. Thereafter, the polysilicon layer is selectively etched to leave an electrode layer or wiring layer by using etching gas not containing carbon and fluorine and using the etching mask. It is possible to obtain a high etching selection ratio with simple processes.

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Iizuka & Nakamura, "High Selective Reactive Ion Etching of Gate Materials with HBr and Carbon Eliminated Clean Process," SDM90-84 51-55 (1990).
Matsuura et al., "Anisotropic Etching of n+Polysilicon with High Selectivity Using a Nitrogen Added Chlorine ECR Plasma, " SDM90-83 45-50 (1990).
Nakamura, Moritaka, et al., "Mechanism of High Selectivity and Impurity Effects in HBr RIE: In-Situ Surface Analysis", Jpn. J. of Appl. Phys. vol. 31 pp. 1999-2005 Part, 1 No. 6B, Jun. 1992.

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