Method of etching patterns in III-V material with accurate depth

Details Method of etching patterns in III-V material with accurate depth Method of etching patterns in III-V material with accurate depth

1995-05-25

1996-10-22

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

1566461, 1566511, 216 19, 216 76, 216101, H01L 21302

Patent

active

055676596

ABSTRACT:
A method of accurately controlling the depth of etched gratings in uniform or layered quaternary III-V material. A native oxide is selectively grown on the area of the quaternary to be patterned and this native oxide is subsequently removed to engrave the surface. Periodic repetition of the oxide growth/removal steps results in gratings of the desired depths.

REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 3898141 (1975-08-01), Ermanis et al.
patent: 4326911 (1982-04-01), Howard et al.
patent: 4670093 (1987-06-01), Maerz et al.
patent: 4883768 (1989-11-01), Swindal et al.

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