Method of etching non-doped polysilicon

Details Method of etching non-doped polysilicon Method of etching non-doped polysilicon

1999-03-30

2000-10-17

Powell, William

Electrolysis: processes, compositions used therein, and methods

Electrolytic erosion of a workpiece for shape or surface...

205674, 438745, 438753, H01L 2100

Patent

active

061325929

ABSTRACT:
A semiconductor device having a non-doped polysilicon and a doped polysilicon containing group III element is selectively wet-etched the non-doped polysilicon by using an etching liquid. The etching liquid is an electrolytic liquid obtained on a side of a cathode electrode and the electrolytic liquid is formed by electrolyzing a liquid containing pure water added with ammonium ion.

REFERENCES:
patent: 2998362 (1961-08-01), Hall
patent: 3730800 (1973-05-01), Nakashima

Affiliated with

Also associated with

Rating

Method of etching non-doped polysilicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching non-doped polysilicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching non-doped polysilicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-464964