Method of etching metallic thin film on thin film resistor

Details Method of etching metallic thin film on thin film resistor Method of etching metallic thin film on thin film resistor

2007-05-29

2007-05-29

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S738000, C438S745000, C257SE21004

Reexamination Certificate

active

10944665

ABSTRACT:
An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.

REFERENCES:
patent: 4473940 (1984-10-01), Kiriseko
patent: 4671852 (1987-06-01), Pyke
patent: 4682402 (1987-07-01), Yamaguchi
patent: 4878770 (1989-11-01), Ruggierio et al.
patent: 4986877 (1991-01-01), Tachi et al.
patent: 5043295 (1991-08-01), Ruggerio et al.
patent: 5372673 (1994-12-01), Stager et al.
patent: 5382916 (1995-01-01), King et al.
patent: 5420063 (1995-05-01), Maghsoudnia et al.
patent: 5468672 (1995-11-01), Rosvold
patent: 5500553 (1996-03-01), Ikegami
patent: 5503878 (1996-04-01), Suzuki et al.
patent: 5525831 (1996-06-01), Ohkawa et al.
patent: 5547896 (1996-08-01), Linn et al.
patent: 5648281 (1997-07-01), Williams et al.
patent: 5989970 (1999-11-01), Ohkawa et al.
patent: 6242792 (2001-06-01), Miura et al.
patent: 6242793 (2001-06-01), Colombo et al.
patent: 6274452 (2001-08-01), Miura et al.
patent: 61280620 (1986-12-01), None
patent: 63062746 (1988-03-01), None
patent: 2-58259 (1990-02-01), None
patent: 02-213138 (1990-08-01), None
patent: 03012960 (1991-01-01), None
patent: 03-222414 (1991-10-01), None
patent: 04157723 (1992-05-01), None
patent: 06-005599 (1994-01-01), None
patent: 7-202124 (1995-08-01), None
patent: 07335831 (1995-12-01), None
patent: 8-250462 (1996-09-01), None
patent: 10144866 (1998-05-01), None
Office Action dated Dec. 10, 2002 in Japanese Patent Application No. 10-217725 with English translation.
Office Action dated Aug. 5, 2003 in Japanese Patent Application No. 10-276083 with English translatino.
Notice of Reason of Rejection, Mailing Date: Sep. 3, 2002, Mailing No. 270676.
Nagahata, Preparation of Thermal Head, English Abstract of JP 63062746 A, 2 pages.
Iida, Semiconductor Device and Manufacture Thereof, English Abstract of JP 3012960 A, 2 pages.
Decision for Refusal dated Jun. 6, 2006 in Japanese Application No. 10-214495 with English translation.

Affiliated with

Also associated with

Rating

Method of etching metallic thin film on thin film resistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching metallic thin film on thin film resistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching metallic thin film on thin film resistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3805437