Method of etching materials containing silicon

Details Method of etching materials containing silicon Method of etching materials containing silicon

1975-04-21

1976-07-27

Drummond, Douglas J.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

156 17, 252 792, H01L 21318, C09K 1304

Patent

active

039716830

ABSTRACT:
The invention relates to a method of etching solid, chemically resistant materials containing silicon (Si) by means of a hot melt made up of Society phosphorus pentoxide (P.sub.2 O.sub.5) and phosphoric acid (H.sub.3 PO.sub.4) (anhydrous).

REFERENCES:
patent: 3715249 (1973-02-01), Panousis et al.
patent: 3871931 (1975-03-01), Godber
Van Gelder et al., "The Etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a Mask, "Journal of the Electrochemical Society," vol. 114 (1967), pp. 869-872.

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