Method of etching ceramics of alumina/TiC with high density plas

Details Method of etching ceramics of alumina/TiC with high density plas Method of etching ceramics of alumina/TiC with high density plas

1998-05-11

2000-02-22

Utech, Benjamin

Etching a substrate: processes

Forming or treating article containing magnetically...

216 71, 216 76, 216 81, B44C 122

Patent

active

060276606

ABSTRACT:
A method of patterning a ceramic slider by plasma etching is disclosed. The ceramic slider contains alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching a first surface on the ceramic slider using an etchant gas. The etchant gas generally includes argon, and a fluorine containing gas. The power source density, during etching ranges from about 0.5 W/(cm.sup.2) to 8 W/(cm.sup.2). Another aspect of the invention is a ceramic slider resulting from the method of the invention having a smoothness ranging from about 20 to 300 .ANG. as measured by atomic force microscopy.

REFERENCES:
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patent: 4601782 (1986-07-01), Bianchi et al.
patent: 5520716 (1996-05-01), Takagi et al.
patent: 5567333 (1996-10-01), Hira et al.
Bayer, T. et al., "Smoothing the Surface of Multi--Phase Materials", IBM TDB, 31(11) (Apr. 1989).
Hinkel, H. et al., "Method of Etching a Composite Material Consisting Electrically Conductive and Dielectric Particles", IBM TDB, 27(6) (Nov. 1984).
"Process to Reactively Etch A1203 for Thin Film Head Fabrication", Research Disclosure No. 320 (Dec. 1990).

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