Method of etching back of semiconductor wafer

Details Method of etching back of semiconductor wafer Method of etching back of semiconductor wafer

2006-04-04

2006-04-04

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C216S041000

Reexamination Certificate

active

07022614

ABSTRACT:
A resist pattern is formed at an outermost peripheral end of the surface of a wafer. Thereafter, the back of the wafer is back-etched using chemicals to thin the wafer. A passivation film is left behind only at scribe lines for separating semiconductor chips located at the outermost peripheral end of the wafer surface and thereafter the wafer is back-etched.

REFERENCES:
patent: 5422921 (1995-06-01), Chiba
patent: 5843844 (1998-12-01), Miyanaga
patent: 5903092 (1999-05-01), Akama
patent: 03116716 (1991-05-01), None
patent: 5-109688 (1993-04-01), None
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patent: 06252035 (1994-09-01), None
patent: 11-168040 (1999-06-01), None
Okubo et al., Manufacture of X-Ray Mask (English Abstract of JP 0625035 A), Sep. 9, 1994, 2 pages.
Nikawa, X-ray Mask and Manufacture Thereof, May 17, 1991, English Abstract of JP 03116716 A, 2 pages.

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