Method of etching and etching apparatus

Details Method of etching and etching apparatus Method of etching and etching apparatus

2011-05-17

2011-05-17

Tran, Binh X (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S724000, C438S729000, C438S743000, C438S744000

Reexamination Certificate

active

07943524

ABSTRACT:
Silicon oxide film having, as a sublayer, a silicon nitride film layer serving as a protective film layer for 5 gate formed on silicon substrate is etched by introducing a processing gas including a gaseous mixture containing at least C4F6, Ar, O2and N2into an airtight processing chamber and carrying out a plasma treatment in a self-alignment contact process, thereby forming contact hole. For the 10 processing gas, e.g., the ratio of N2gas flow rate to C4F6gas flow rate ranges from 25/8 to 85/8, the ratio of O2and N2gas flow rate to C4F6gas flow rate ranges from 15/4 to 45/4 and the ratio of N2gas flow rate to O2gas flow rate ranges from 5 to 17. Accordingly, stable contact holes of 15 high aspect ratio exhibiting desirable control characteristics is formed while minimizing etching the silicon nitride film, a protective film layer for gate.

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