Method of etching adjacent layers

Details Method of etching adjacent layers Method of etching adjacent layers

1996-01-22

1998-06-30

Goodrow, John

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438739, H01L 2170

Patent

active

057733686

ABSTRACT:
A method of manufacturing a semiconductor component includes sputtering a first metal layer (16) over a substrate (11), sputtering a second metal layer (17) over the first metal layer (16), selectively etching the second metal layer (17) versus the first metal layer (16), selectively etching the first metal layer (16) versus the second metal layer (17), and thereafter, selectively re-etching the second metal layer (17) versus the first metal layer (16).

REFERENCES:
patent: 3571913 (1971-03-01), Bodway
patent: 5130267 (1992-07-01), Kaya et al.

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