Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1995-12-21
1999-03-16
Green, Anthony
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
216 41, 216 96, 216 99, 438455, 438456, 438745, 438749, 438753, 438756, 438757, 438705, 438928, 438973, H01L 21302, H01L 21306
Patent
active
058830120
ABSTRACT:
Trench structures (12,32,35,46) are formed in single crystal silicon substrates (10,30) that have either a (110) or (112) orientation. A selective wet etch solution is used that removes only the exposed portions of the single crystal silicon substrates (10,30) that are in the (110) or (112) crystal planes. The trench structures (12,32,35,46) are defined by the {111} crystal planes in the single crystal silicon substrate (10,30) that are exposed during the selective wet etch process. Trench structures (32,35) can be formed on both sides of a single crystal silicon substrate (30) to form an opening (34). Opening (34) can be used as an alignment mark to align front side processing to backside and vice versa. Trench structures can also be use to form a microstructure (41,61) for a sensor (40,60).
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Chiou Herng-Der
Lue Ping-chang
Collopy Daniel R.
Green Anthony
Motorola Inc.
Seddon Kenneth M.
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