Method of etching a TE/PCMO stack using an etch stop layer

Details Method of etching a TE/PCMO stack using an etch stop layer Method of etching a TE/PCMO stack using an etch stop layer

2005-08-30

2010-06-01

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S707000, C438S714000, C438S721000, C438S722000, C438S723000

Reexamination Certificate

active

07727897

ABSTRACT:
A method of etching a top electrode/ferroelectric stack using an etch stop layer includes forming a first layer of a first dielectric material on a substrate; forming a bottom electrode in the first layer of a first dielectric material; depositing an etch stop layer on the first layer of the first dielectric material and the bottom electrode, including forming a hole therein; depositing a layer of ferroelectric material and depositing top electrode material on the ferroelectric material to form a top electrode/ferroelectric stack; stack etching the top electrode and ferroelectric material; depositing a layer of a second dielectric material encapsulating the top electrode and ferroelectric material; etching the layer of the second dielectric material to form a sidewall about the top electrode and ferroelectric material; and depositing a second and third layers of the first dielectric material.

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