Method of etching a substrate and method of forming a plurality

Details Method of etching a substrate and method of forming a plurality Method of etching a substrate and method of forming a plurality

1998-02-17

2000-06-27

Gulakowski, Randy

Etching a substrate: processes

Forming or treating an article whose final configuration has...

216 42, H01J 900

Patent

active

060803258

ABSTRACT:
A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3814968 (1974-06-01), Nathanson et al.
patent: 4407695 (1983-10-01), Deckman et al.
patent: 4513308 (1985-04-01), Greene et al.
patent: 4566935 (1986-01-01), Hornbeck
patent: 4685996 (1987-08-01), Busta et al.
patent: 4766340 (1988-08-01), Van der Mast et al.
patent: 4806202 (1989-02-01), Tang et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 4968382 (1990-11-01), Jacobson et al.
patent: 4992699 (1991-02-01), McClure et al.
patent: 5064396 (1991-11-01), Spindt
patent: 5083958 (1992-01-01), Longo et al.
patent: 5186670 (1993-02-01), Doan et al.
patent: 5201992 (1993-04-01), Marcus et al.
patent: 5220725 (1993-06-01), Chan et al.
patent: 5221221 (1993-06-01), Okaniwa
patent: 5228877 (1993-07-01), Allaway et al.
patent: 5229331 (1993-07-01), Doan et al.
patent: 5266530 (1993-11-01), Bagley et al.
patent: 5267884 (1993-12-01), Hosogi
patent: 5275693 (1994-01-01), Nakama
patent: 5277638 (1994-01-01), Lee
patent: 5312514 (1994-05-01), Kumar
patent: 5399238 (1995-03-01), Kumar
patent: 5510156 (1996-04-01), Zhao
Marcus et al., "Formation of Silicon Tips with 1 nm Radius", Appl. Physics Letter, vol. 56, No. 3, Jan. 15, 1990.
Hunt et al., "Structure and Electrical Characteristics of Silicon Field Emmission Microelectric Devices", IEEE Trnasaction on Electron Devices, vol. 38, No. 10, Oct. 1991.
McGruer et al., "Oxidation-Sharpened Gated Field Emitter Array Process", IEEE Transactions On Electron Devices, vol. 38, No. 10, Oct. 1991.
R.Z. Bakhtizin, S.S. Ghots, and E.K. Ratnikova, "GaAs Field Emitter Arrays", IEEE Transactions On Electron Devices, vol. #8, No. 10, Oct. 1991, pp. 2398-2400.
R.N. Thomas, R.A. Wickstrom, D.K. Schrodcer, and H.C. Nathanson, "Fabrication and Some Applications of Large-Area Silicon Field Emission Arrays", Solid-State Electronics, vol. 17, 1974, pp. 155-163.
Keiichi Betsui "Fabrication and Characteristics of Si Field Emitter Arrays" 1991, Fujitsu Laboratories, pp. 26-29, 1991.

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