Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-10-04
2005-10-04
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S229000, C438S757000
Reexamination Certificate
active
06951825
ABSTRACT:
A method of etching includes preparing a substrate; depositing a first etch stop layer; forming an iridium bottom electrode layer; depositing a SiN layer; depositing and patterning an aluminum hard mask; etching a non-patterned SiN layer with a SiN selective etchant, stopping at the level of the iridium bottom electrode layer; etching the first etch stop layer with a second selective etchant; depositing an oxide layer and CMP the oxide layer to the level of the remaining SiN layer; wet etching the SiN layer to form a trench; depositing a layer of ferroelectric material in the trench formed by removal of the SiN layer; depositing a layer of high-k oxide; and completing the device, including metallization.
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Evans David R.
Hsu Sheng Teng
Li Tingkai
Ulrich Bruce D.
Chen Eric B.
Curtin Joseph P.
Ripma David C.
Sharp Laboratories of America Inc.
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