Method of etching a semiconductor substrate

Details Method of etching a semiconductor substrate Method of etching a semiconductor substrate

1995-11-27

1998-12-22

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438460, 438700, H01L 21302

Patent

active

058519289

ABSTRACT:
A method of etching a semiconductor substrate (11) includes thinning (102) the semiconductor substrate (11), providing (103) a support layer (30) for the semiconductor substrate (11), providing (104) an etch mask (28) over the semiconductor substrate (11), and etching (105) the semiconductor substrate (11) using an etchant mixture of hydrofluoric acid, nitric acid, phosphoric acid, sulfuric acid, and a wetting agent at a temperature below ambient. The method is capable of using one etch step (105) and one etch mask (28) to form a plurality of trenches (12, 13) having the same width (15, 17) but different depths (16, 18) and different orientations. The method can be used to singulate different sizes and configurations of semiconductor dice from the semiconductor substrate (11).

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