Method of etching a semiconductor device

Details Method of etching a semiconductor device Method of etching a semiconductor device

2006-12-05

2006-12-05

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S690000

Reexamination Certificate

active

07144749

ABSTRACT:
A method for etching windows40in a semiconductor device10having a metal fuse14embedded therein is disclosed. The method is for allowing accurate fuse blowing, in particular laser fuse blowing. The method involves the controlled removal of layers having different phase diffraction characteristics. After treatment, the remaining area between the metal fuse14and the etched surface of the semiconductor has substantially uniform phase diffraction characteristics.

REFERENCES:
patent: 6004881 (1999-12-01), Bozada et al.
patent: 6174753 (2001-01-01), Liao
patent: 6194318 (2001-02-01), Ikeda
patent: 6300252 (2001-10-01), Ying et al.

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