Method of etching a metallic film on a substrate

Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S074000, C216S058000, C134S001100, C134S026000, C134S036000

Reexamination Certificate

active

10838275

ABSTRACT:
A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the oxidizing and reducing agents, and the number of etching phases.

REFERENCES:
patent: 5505322 (1996-04-01), Shinohara et al.
patent: 5993679 (1999-11-01), Koide et al.
patent: 6008140 (1999-12-01), Ye et al.
patent: 2001/0018922 (2001-09-01), Jolley

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of etching a metallic film on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching a metallic film on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching a metallic film on a substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3786585

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.