Method of etching a metal layer using a mask, a...

Details Method of etching a metal layer using a mask, a... Method of etching a metal layer using a mask, a...

2007-06-05

2007-06-05

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000

Reexamination Certificate

active

10419075

ABSTRACT:
Methods for etching a metal layer and a metallization method of a semiconductor device using an etching gas that includes Cl2and N2are provided. A mask layer is formed on the metal layer, the etching gas is supplied to the metal layer, and the metal layer is etched by the etching gas using the mask layer as an etch mask. The metal layer may be formed of aluminum or an aluminum alloy. Cl2and N2may be mixed at a ratio of 1:1 to 1:10. The etching gas may also include additional gases such as inactive gases or gases that include the elements H, O, F, He, or C. In addition, N2may be supplied at a flow rate of from 45–65% of the total flow rate of the etching gas, which results in a reduction in the occurrence of micro-loading and cone-shaped defects in semiconductor devices.

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