Method of etching a mask layer and a protecting layer for...

Details Method of etching a mask layer and a protecting layer for... Method of etching a mask layer and a protecting layer for...

2005-02-08

2005-02-08

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S712000, C438S720000, C216S041000

Reexamination Certificate

active

06852637

ABSTRACT:
A method of etching a mask layer as a protecting layer for metal contact windows uses a victim layer with slopes to avoid undercutting. First, a mask layer is formed on a semiconductor substrate. Next, a photoresist with patterns is formed on the surface of the mask layer. Next, a victim layer is formed on the surface of the photoresist according to the photoresist topography, such that a plurality of slopes is formed on the sidewalls of the photoresist. The photoresist and the victim layer with slopes are used as the etching mask to etch the mask layer to form patterns.

REFERENCES:
patent: 5972773 (1999-10-01), Liu et al.
patent: 5985765 (1999-11-01), Hsiao et al.
patent: 6040211 (2000-03-01), Schrems
patent: 6207583 (2001-03-01), Dunne et al.
patent: 6291887 (2001-09-01), Wang et al.
patent: 6316169 (2001-11-01), Vahedi et al.

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