Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-04-04
2006-04-04
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S627000, C438S198000, C438S296000
Reexamination Certificate
active
07023068
ABSTRACT:
In a MOS transistor, the drain capacitance is reduced by forming a lateral trench underneath the drain. This is typically done by using an anisotropic wet etch process in a <110> direction of a <100> orientation wafer.
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Hopper Peter J.
Johnson Peter
Lindorfer Philipp
Vashchenho Vladislav
National Semiconductor Corporation
Prenty Mark V.
Vollrath Jurgen
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