Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-26
2005-04-26
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S714000, C438S720000, C216S067000, C216S075000
Reexamination Certificate
active
06884730
ABSTRACT:
In a thin-film magnetic head, a top pole layer for defining the recording track width includes a first layer that touches a recording gap layer, and a second layer located on the first layer. The top pole layer is formed in the following manner. First, a magnetic layer is formed on the recording gap layer. Next, the second layer is formed on the magnetic layer by plating. Using the second layer as a mask, the magnetic layer is selectively etched by reactive ion etching to form the first layer. The reactive ion etching uses an etching gas that contains a halogen type gas and a carbon oxide type gas.
REFERENCES:
patent: 4439294 (1984-03-01), Bril et al.
patent: 5607599 (1997-03-01), Ichihara et al.
patent: 5966800 (1999-10-01), Huai et al.
patent: 6043959 (2000-03-01), Crue et al.
patent: 6259583 (2001-07-01), Fontana, Jr. et al.
patent: 6284146 (2001-09-01), Kim et al.
patent: 6723252 (2004-04-01), Hsiao et al.
patent: 20010055879 (2001-12-01), Sasaki
patent: A 6-44528 (1994-02-01), None
patent: A 2001-344709 (2001-12-01), None
Araki Hironori
Kamigama Takehiro
Sasaki Yoshitaka
Headway Technologies Inc.
SAE Magnetics (H.K. ) Ltd.
Vinh Lan
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