Method of etching a device using a hard mask and etch stop...

Details Method of etching a device using a hard mask and etch stop... Method of etching a device using a hard mask and etch stop...

2011-07-19

2011-07-19

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S041000, C216S058000, C216S074000, C438S689000, C438S706000, C438S723000, C438S724000

Reexamination Certificate

active

07981308

ABSTRACT:
A method of etching a device in one embodiment includes providing a silicon carbide substrate, forming a silicon nitride layer on a surface of the silicon carbide substrate, forming a silicon carbide layer on a surface of the silicon nitride layer, forming a silicon dioxide layer on a surface of the silicon carbide layer, forming a photoresist mask on a surface of the silicon dioxide layer, and etching the silicon dioxide layer through the photoresist mask.

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