Method of etching a bond pad

Etching a substrate: processes – Gas phase etching of substrate – Etching a multiple layered substrate where the etching...

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216 67, 216 77, 438612, 438634, 438636, 438637, B44C 122

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059118873

ABSTRACT:
This invention relates to a method of etching a bond pad in a semiconductor or integrated circuit, a method of using an etching apparatus and a semiconductor device.

REFERENCES:
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4283249 (1981-08-01), Ephrath
patent: 4678539 (1987-07-01), Tomita et al.
patent: 4711701 (1987-12-01), McLevige
patent: 4892835 (1990-01-01), Rabinzohn et al.
patent: 5065208 (1991-11-01), Shah et al.
patent: 5166771 (1992-11-01), Godinho et al.
patent: 5188704 (1993-02-01), Babie et al.
patent: 5201994 (1993-04-01), Nonaka et al.
patent: 5219784 (1993-06-01), Solheim
patent: 5225040 (1993-07-01), Rohner
patent: 5240555 (1993-08-01), Kilburn
patent: 5258096 (1993-11-01), Sandhu et al.
patent: 5385634 (1995-01-01), Butler et al.
patent: 5410799 (1995-05-01), Thomas
patent: 5429070 (1995-07-01), Campbell et al.
patent: 5431778 (1995-07-01), Dahm et al.
patent: 5661083 (1997-08-01), Chen et al.
patent: 5688703 (1997-11-01), Klingbeil, Jr. et al.
patent: 5780323 (1998-07-01), Forouhi et al.
IEDM 95, pp. 907-910, 1995, K.P. Lee, et al., "A Process Technology for 1 Giga-Bit DRAM".

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