Method of estimating initial values of potential in semiconducto

Details Method of estimating initial values of potential in semiconducto Method of estimating initial values of potential in semiconducto

1995-09-11

1997-10-28

Teska, Kevin J.

Boots, shoes, and leggings

364488, G06F 9455

Patent

active

056823380

ABSTRACT:
In order to estimate an initial potential value for semiconductor device simulation at each of iterative procedures a computer system, a plurality of bias conditions are stored in a memory. Following this, one bias condition is retrieved from the memory at a given iterative procedure. Further, an analysis result already obtained in an iterative procedure, which precedes the given iterative procedure, is retrieved from the memory. Subsequently, an initial potential value is estimated which is used in the give iterative procedure by solving a Laplace equation which is weighted by a coefficient including a reciprocal of electric field intensity.

REFERENCES:
patent: 5103415 (1992-04-01), Omura et al.
patent: 5289384 (1994-02-01), Akiyama
Kavadias et al., "Calculation of Pixel Detector Capacitance through three Dimensional numerical solution of the laplace equation", IEEE Transactions on Nuclear Science, vol. 41, No. 2, Apr. 1994, pp. 397-401.
Back et al, "A New Nonlinear Relaxation Scheme for solving Semiconductor Device Equation", IEEE transaction on Computer-Aided design, vol. 10 No. 9, Sep. 1991, pp. 1175-1186.
Kurata et al "An Explicit method of numerical integration for the complete set of semiconductor device Equations", IEEE Transactions on Computer-Aided Design. vol. 11, No. 8, Aug. 1992 pp. 1013-1023.
Edwards et al., "Initial Guess Strategy and Linear Algebra Techniques for a Coupled Two-Dimensional Semiconductor Equation Solver", GEC Research Limited, GEC Hirst Research Center (1990), pp. 272-280.
Kohyama, "Very High Speed MOS Devices", Clarendon Press, Oxford, (1985) pp. 277-291.
"Nasecode IV: Proceedings of the Fourth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", Jun. 19-21 1985, Trinity College, Dublin Ireland.
"A Fast, General Three-Dimensional Device Simulator and Its Application in a Submicron EPROM Design Study", Thomas D. Linton, Jr. et al. IEEE Transactions on Computer-Aided Design, vol. 8 No. 5, May 1989 pp. 508-515.

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