Method of erasing UPROM transistors

Details Method of erasing UPROM transistors Method of erasing UPROM transistors

1995-01-12

1997-08-12

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Repair or restoration

36518532, 365218, 257323, 438 15, 438257, 438308, 438972, H01L 21263, H01L 218246

Patent

active

056565216

ABSTRACT:
The failure rate of semiconductor devices containing UPROM transistors is improved by erasing the UPROM transistors using X-rays. The semiconductor devices are subsequently exposed to UV radiation to erase other transistors charged during X-ray exposure.

REFERENCES:
patent: 3812479 (1974-05-01), Wittles et al.
patent: 4393479 (1983-07-01), Du et al.
patent: 5063424 (1991-11-01), Melanotte et al.
patent: 5343434 (1994-08-01), Noguchi
patent: 5379249 (1995-01-01), Salmon
patent: 5440510 (1995-08-01), Caprara et al.
R.R. Ferber, IEEE Trans. Nucl. Sci., 18 (1971)138 "Preprogrammed . . . memory by use of ionizing radiation". Jun. 1971.
D.R. Myers, IEEE Trans. Nucl. Sci., NS28 (6) (1981)4038, "UV EPROM erasure in flash X-ray . . . ". Dec. 1981.
W.E. Abare et al., IEEE Trans. Nucl. Sci., NS30 (6) (1983) 4285 "Flash X-ray testing of . . . EAROMS". Dec. 1983.

Affiliated with

Also associated with

Rating

Method of erasing UPROM transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of erasing UPROM transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of erasing UPROM transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-159899