Method of erasing a flash memory device

Details Method of erasing a flash memory device Method of erasing a flash memory device

1997-06-26

1999-09-28

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 36518526, G11C 1600

Patent

active

059598930

ABSTRACT:
The present invention discloses an erasure method which can minimize a flow of current from a drain region into a substrate due to a strong electric field formed between the drain region and the substrate when a flash memory device is erased. The first erasure operation is performed in condition that a voltage of -13V is applied to a control gate and a drain and source regions are grounded, and the second erasure operation is then performed in condition that a voltage of -13V is applied to the control gate, a voltage of 5V is applied to the drain region and the source region is floated.

REFERENCES:
patent: 5255237 (1993-10-01), Kodama
patent: 5295107 (1994-03-01), Okazawa et al.
patent: 5299166 (1994-03-01), Suh et al.
patent: 5327385 (1994-07-01), Oyama
patent: 5357476 (1994-10-01), Kuo et al.
patent: 5361235 (1994-11-01), Kodama
patent: 5412608 (1995-05-01), Oyama
patent: 5416738 (1995-05-01), Shrivastava

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