Method of erasing a flash memory cell and device for erasing the

Static information storage and retrieval – Floating gate – Particular biasing

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365218, 36518533, G11C 700

Patent

active

059634790

ABSTRACT:
The present invention disclosed a method of erasing a flash memory comprising the step of applying a drain bias voltage for erasing to any one of said sectors; applying a drain bias voltage for erasing to a next sector before said sector is completely erased, whereby the sectors are erased sequentially.

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patent: 5818763 (1998-10-01), Villa et al.

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