Method of epitaxially growing thin films using ion implantation

Details Method of epitaxially growing thin films using ion implantation Method of epitaxially growing thin films using ion implantation

1993-04-26

1995-01-10

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 79, 117929, 117931, 117936, C30B 900

Patent

active

053797124

ABSTRACT:
A method of epitaxially growing a surface layer on a substrate including the steps of coating the substrate surface, with a meltable film, melting the film and implanting ions into he melted film, to deposit ion material onto the coated substrate surface.

REFERENCES:
patent: 3765956 (1973-10-01), Li
patent: 4816421 (1989-03-01), Dynes et al.
patent: 4997636 (1991-03-01), Prins

Affiliated with

Also associated with

Rating

Method of epitaxially growing thin films using ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of epitaxially growing thin films using ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of epitaxially growing thin films using ion implantation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-844009