Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-08-19
1977-06-07
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 148 15, 252 623GA, H01L 21208
Patent
active
040281485
ABSTRACT:
A method of epitaxially growing a laminate semiconductor layer in liquid phase on the crystalline surface of a substrate by successively bringing different kinds of liquid phase epitaxial growth solution into contact with the surface of a substrate, which is characterized in that different kinds of liquid phase epitaxial growth solutions are injected one after another into solution receptacle, the bottom of which is open to the substrate surface, and each of the preceding one of the epitaxial growth solutions is expelled from the solution receptacle by each succeeding one of the epitaxial growth solutions for interchange between both solutions and thereafter each succeeding solution is epitaxially grown on the preceding one.
REFERENCES:
patent: 3665888 (1972-05-01), Bergh
patent: 3755011 (1973-08-01), Kleinknecht
patent: 3765959 (1973-10-01), Unno et al.
patent: 3767481 (1973-10-01), Ettenberg et al.
patent: 3821039 (1974-06-01), Ettenberg
patent: 3896765 (1975-07-01), Ariga
patent: 3909317 (1975-09-01), Itoh et al.
patent: 3940296 (1976-02-01), VAN Oirschot et al.
Nippon Telegraph and Telephone Public Corporation
Ozaki G.
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