Method of enhancing trench edge oxide quality

Details Method of enhancing trench edge oxide quality Method of enhancing trench edge oxide quality

1997-12-18

2000-04-18

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

148 333, 438296, H01L 4900, H01L 2176

Patent

active

060514787

ABSTRACT:
A shallow trench isolation structure is formed with a nitridated oxide liner on the sides and edges of the trench, thereby reducing interfacial strain. Embodiments include forming a trench opening in a monocrystalline silicon substrate or in an epitaxial layer formed thereon. An oxide liner is formed at the internal surface of the trench opening in a nitrous oxide ambience, creating flexible silicon-nitrogen (Si--N) bonds which relieves stress induced at the side walls and edges of the trench. The lined trench opening is then filled with an insulating material.

REFERENCES:
patent: 4374011 (1983-02-01), Vora et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5733383 (1998-03-01), Fazan et al.
patent: 5780346 (1998-07-01), Arghavani et al.

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