Method of enhancing the electronic properties of an undoped and/

Details Method of enhancing the electronic properties of an undoped and/ Method of enhancing the electronic properties of an undoped and/

1979-07-16

1980-10-07

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 2, 357 30, 427 39, 427 74, H01L 3104, B05D 306

Patent

active

042266432

ABSTRACT:
The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
R. A. Street et al. "Luminescence Studies of Plasma-Deposited Hydrogenated Silicon", Physical Review B, vol. 18, pp. 1880-1891 (1978).
K. J. Matysik et al. "Hydrogen Evolution from Plasma-Deposited Amorphous Silicon Films", J. Vac. Sci. Technol., vol. 15, pp. 302-304 (1978).
C. C. Tsai et al. "Effect of Annealing on The Optical Properties of Plasma Deposited Amorphous Hydrogenated Silicon", Solar Energy Materials, vol. 1, pp. 29-42 (1979).

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