Method of enhancing the current gain of bipolar junction transis

Details Method of enhancing the current gain of bipolar junction transis Method of enhancing the current gain of bipolar junction transis

1995-02-07

1996-10-15

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 24, 437162, 437 46, 148DIG124, H01L 21265

Patent

active

055653707

ABSTRACT:
The present invention teaches a method and structure of enhancing the current gain characteristics of a bipolar junction transistor using a semiconductor substrate comprising a base, an emitter and a collector and an interface at the emitter, such that a carrier current conducts between the base and the emitter. Further, a first polysilicon layer is formed superjacent the interface, and is implanted with O.sub.2. Subsequently, the substrate is heated such that the emitter interface is obstructed by a silicon dioxide formation, thereby blocking a portion of carrier current from passing through the interface.

REFERENCES:
patent: 3914138 (1975-10-01), Rai-Choudhury
patent: 4755487 (1988-07-01), Scovell et al.
patent: 5096840 (1992-03-01), Bean et al.
patent: 5194397 (1993-03-01), Cook et al.
patent: 5208479 (1993-05-01), Mathews et al.
patent: 5221423 (1993-06-01), Sugino et al.
patent: 5238849 (1993-08-01), Sato
patent: 5296388 (1994-03-01), Kameyama et al.
patent: 5420050 (1995-05-01), Jerome et al.

Affiliated with

Also associated with

Rating

Method of enhancing the current gain of bipolar junction transis does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of enhancing the current gain of bipolar junction transis, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of enhancing the current gain of bipolar junction transis will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1245555