Method of enhancing the c-axis perpendicular orientation of bari

Details Method of enhancing the c-axis perpendicular orientation of bari Method of enhancing the c-axis perpendicular orientation of bari

1996-04-17

1999-01-26

Resan, Stevan A.

Stock material or miscellaneous articles

Composite

Of metal

4284722, 428694TS, 428900, 427131, 20419215, 2041922, G11B 566

Patent

active

058636617

ABSTRACT:
A method of making c-axis perpendicularly oriented barium hexaferrite thin films by the crystallization of amorphous barium hexaferrite on a platinum underlayer is provided. Using a thin underlayer of platinum, barium hexaferrite films can be deposited by conventional rf diode or magnetron sputtering. Such deposition may be performed at room temperature, after which excellent c-axis perpendicular orientation can be achieved by rapid ex-situ annealing. The c-axis perpendicular orientation can also be achieved through in-situ annealing.

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