Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1999-05-03
2000-11-21
Fourson, George
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438623, H01L 2147
Patent
active
06150274&
ABSTRACT:
A method for planarizing the surface of a semiconductor wafer is disclosed. It involves the steps of: (a) applying a coating solution containing a polymeric material on a semiconductor wafer having a non-planar surface; (b) curing the polymeric material to cause the polymeric material to become a hardened polymeric material; (c) subjecting the hardened polymeric material to a N.sub.2 O gas plasma treatment, so that an outer portion of the hardened polymeric material can be polished by a conventional CMP slurry which is typically intended for polishing silicon oxide; and (d) polishing the N.sub.2 O gas plasma treated polymeric material using a conventional CMP slurry. This method allows conventional CMP slurries to be used for the chemical-mechanical polishing of the chemically more inert polymeric material, thus eliminating stocking and potential compatibility problem. It also advantageously allows the unaffected portion of the polymeric material to serve as a self-provided etch stop.
REFERENCES:
patent: 5976979 (1999-11-01), Chen
Liou Ping
Yung Hao-Chich
Abbott Barbara Elizabeth
Fourson George
Liauh W. Wayne
Winbond Electronics Corp.
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