Method of electron beam exposure

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 37302

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active

046441700

ABSTRACT:
A method of electron beam exposure comprising selectively exposing a resist film on a substrate a plurality of times with an electron beam whose dose is lower than a desired dose sufficient to produce a difference in molecular weight between the exposed area and the nonexposed area, the cumulative dose corresponding to said desired dose.

REFERENCES:
patent: 4298803 (1981-11-01), Matsuura et al.
Ma, et al., "Proximity Corrections in a Raster Scan Electron Lithography Machine," J. Vac. Sci. Technol, 19(4) Nov/Dec. 1981, pp. 1275-1278, 1981.
James S. Greenwich, Electron-Beam Processes, Electron-Beam Technology in Microelectronic Fabrication; G. R. Brewer (Edited); Academic Press; 1980, pp. 97-99.

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