Method of effecting liquid phase epitaxial growth of group III-V

Details Method of effecting liquid phase epitaxial growth of group III-V Method of effecting liquid phase epitaxial growth of group III-V

1975-06-26

1977-06-21

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 335, 148172, 148 15, 156625, 156612, 331 945H, H01L 21208

Patent

active

040309495

ABSTRACT:
Disclosed is a method of yielding a multilayer-liquid phase epitaxial growth of Al.sub.x Ga.sub.1.sub.-x As and GaAs for manufacturing a double heterostructure laser, light emitting diode, etc., which is characterized in that hydrogen gas or inert gas, containing GaCl gas, is used as an atmosphere for the epitaxial growth. This method permits the liquid phase epitaxial growth of a semiconductor layer even on an Al.sub.x Ga.sub.1.sub.-x As (x .gtoreq. 0.3) which is once exposed to the air or subjected to an etching treatment. Accordingly, this method is suitable for the manufacture of a semiconductor element having a buried active layer. This method also permits the manufacture of an epitaxial wafer having a low dislocation density.

REFERENCES:
patent: 3294600 (1966-12-01), Yokota
patent: 3687744 (1972-08-01), Ogirima et al.
patent: 3755013 (1973-08-01), Hollan
patent: 3780358 (1973-12-01), Thompson
patent: 3933538 (1976-01-01), Akai et al.

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