Method of edge doping SOI islands

Details Method of edge doping SOI islands Method of edge doping SOI islands

1989-02-20

1991-10-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437158, 148DIG31, 148DIG44, H01L 21225, H01L 21265

Patent

active

050533452

ABSTRACT:
SOI islands having doped edges are formed by providing over the surface of a layer of single crystalline silicon on an insulating substrate a masking layer formed of two layers, the lowermost layer adjacent the silicon layer being silicon oxide and the uppermost layer being silicon nitride. The masking layer is defined using standard photolithographic techniques and etching to form the masking layer over only the areas of the silicon layer which are to form the islands. The uncovered portion of the silicon layer is then removed by etching to form the islands. The lowermost layer of the masking layer is then etched laterally away from the edges of the island to expose a portion of the surface of the silicon layer adjacent the edges of the islands. After removing the uppermost layer of the masking layer, the exposed edge portions of the surface of the silicon layer are doped by ion implantation to form the islands with doped edges.

REFERENCES:
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patent: 4070211 (1978-01-01), Harari
patent: 4199860 (1980-04-01), Beelitz et al.
patent: 4393572 (1983-07-01), Policastro et al.
patent: 4649626 (1987-03-01), Leong
patent: 4666556 (1987-05-01), Fulton et al.

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