Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2006-09-12
2006-09-12
Nguyen, Vinh P. (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S762010
Reexamination Certificate
active
07106086
ABSTRACT:
A method of dynamically switching the voltage screen test parameters without falsely rejecting over stressing short channel length devices. Protection to more vulnerable devices is provided by determining the speed of the die prior to the voltage test screen, segregating the devices based on operational speed performance. A lower voltage is effectively applied during wafer probe test to the faster devices, which directly correspond to the population of short channel devices. Device speed is acquired by measuring the drain-to-source current of each FET, and dividing the resultant sum by the device gate channel width. The device with the higher values represent the faster devices. Alternatively, since faster devices draw more current, the supply current specification may be adjusted based on operational speed measurements.
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Fleury Roger W
Patrick Jon A
Canale Anthony
Curcio Robert
DeLio & Peterson LLC
Nguyen Vinh P.
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