Method of dry plasma etching semiconductor materials

Details Method of dry plasma etching semiconductor materials Method of dry plasma etching semiconductor materials

2006-07-25

2006-07-25

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S712000, C216S072000

Reexamination Certificate

active

07081415

ABSTRACT:
A method of dry plasma etching a semiconductor structure (20), having at least one semiconductor material layer (21), on a semiconductor wafer (200), involving a dry plasma reaction gas mixture (30i) being chemically selected for, and having an etch rate corresponding to, each semiconductor material layer (21); dividing the semiconductor structure (20) into a masked portion (23a) and an unmasked portion (23b); and sequentially exposing the unmasked portion (23b) of the semiconductor structure (20) to the dry plasma reaction gas mixture (30i).

REFERENCES:
patent: 5624529 (1997-04-01), Shul et al.
patent: 6289030 (2001-09-01), Charles
patent: 6728288 (2004-04-01), Funabashi et al.
patent: 2002/0075922 (2002-06-01), Yoo et al.

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