Method of dry etching semiconductor substrate to reduce...

Details Method of dry etching semiconductor substrate to reduce... Method of dry etching semiconductor substrate to reduce...

2007-06-05

2007-06-05

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S433000, C438S524000, C438S525000

Reexamination Certificate

active

10844536

ABSTRACT:
A silicon oxide film (12) and a silicon nitride film (13) are sequentially formed over a silicon substrate (11) having a plane orientation (100). A trench (14) is formed with the patterned silicon nitride (13) as a mask. Argon is ion-implanted from the direction normal to a plane orientation (111) of the interior of the trench (14), followed by formation of an oxide film.

REFERENCES:
patent: 5047359 (1991-09-01), Nagatomo
patent: 5198387 (1993-03-01), Tang
patent: 5807784 (1998-09-01), Kim
patent: 6037238 (2000-03-01), Chang et al.
patent: 6274460 (2001-08-01), Delgado et al.
patent: 6514833 (2003-02-01), Ishida et al.
patent: 6576558 (2003-06-01), Lin et al.
patent: 6586295 (2003-07-01), Ohno
patent: 6762103 (2004-07-01), Kwak et al.
patent: 01225350 (1989-09-01), None
patent: 07-221111 (1995-08-01), None
patent: 10-214844 (1998-08-01), None
patent: 11-067682 (1999-03-01), None
Stanley Wolf and Richard N. Tauber, “Silicon Processing for the VLSI Era—vol. 1: Process Technology,” Lattice Press, Sunset Beach, California (1986), pp. 1-6.
Junichiro Kuno, “Production Method of Semiconductor Integrated Circuit Device,” English Translation of JP 1-225350 A, JPO, Sep. 8, 1989.

Affiliated with

Also associated with

Rating

Method of dry etching semiconductor substrate to reduce... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of dry etching semiconductor substrate to reduce..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of dry etching semiconductor substrate to reduce... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3809566