Method of dry etching for patterning refractory metal layer impr

Details Method of dry etching for patterning refractory metal layer impr Method of dry etching for patterning refractory metal layer impr

1997-02-13

1998-12-29

Dote, Janis L.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Masking of sidewall

216 64, 216 67, 216 75, 438695, 438704, 438714, 438720, 438963, C23F 112

Patent

active

058536027

ABSTRACT:
A refractory metal layer on a silicon oxide layer is exposed to gaseous etchant containing SF.sub.6, Cl.sub.2 and CO so as to be patterned; F radical and Cl radical effectively etch the refractory metal, and a reaction product of CO gas does not allow the dry etching to sidewardly proceed so that the dry etching achieves good anisotropy, a large etching rate and a large selectivity to silicon oxide.

REFERENCES:
patent: 4713141 (1987-12-01), Tsang
patent: 5259923 (1993-11-01), Horie et al.
patent: 5302240 (1994-04-01), Horie et al.
T. Maruyama et al.; "Tungsten etching using an electron cyclotron resonance plasma"; J. Vac. Sci. Technol. A 13(3), May/Jun. 1995; pp. 810-814.
F. Bounasri et al.; "Highly anisotropic etching of submicrometer features on Tungsten"; J. Appl. Phys. 78(11), 1 Dec. 1995; pp. 6780-6783.
Japanese Office Action dated Apr. 28, 1998 with English language translation of Japanese Examiner's comments.

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