Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive
Patent
1995-06-06
1996-10-15
Jackson, Jr., Jerome
Radiant energy
Invisible radiant energy responsive electric signalling
Infrared responsive
2503411, 2503414, 2503384, 257436, 257447, 257448, 257449, 257451, 257455, 257228, G01J 502, G01J 520
Patent
active
055656765
ABSTRACT:
Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance. Optically optimum thickness is assured by individually forming the reflecting plate which optimizes optical properties represented by the absorption of the incident light, and the transparent electrode used for increasing the photodiode capacitance, and also applying a pulse voltage to the transparent electrode at a given timing in such a manner that the potential at the time of resetting of the photodiode potential is lower than that obtained when the charge is accumulated.
REFERENCES:
patent: 5001532 (1991-03-01), Petroff
patent: 5416344 (1995-05-01), Ishizuya et al.
Walter Kosonocky, "Review of Infrared Image Sensors with Schottky-Barrier Detectors," Optoelectronics-Devices and Technologies, vol. 6, No. 2, Dec. 1991, pp. 173-203.
Akihio Tanabe, et al., "Utilizing an Optical Cavity to Increase the Saturation Level in a Schottky-Barrier IR Image Sensor," SPIE, vol. 2020, Apr. 1993, pp. 22-29.
Hammam Elabd, et al., "Theory and Measurements of Photoresponse for Thin Film Pd2Si and PtSi Infrared Schottky-Barrier Detectors with Optical Cavity," RCA Review, vol. 43, Dec. 1982, pp. 569-589.
Walter Kosonocky, "State-of-the-Art in Schottky-Barrier IR Image Sensors," SPIE, vol. 1685, Jun. 1992, pp. 2-19.
Tanabe Akihito
Tohyama Shigeru
Guay John
Jackson, Jr. Jerome
NEC Corporation
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