Method of driving electron-emitting device, electron source,...

Details Method of driving electron-emitting device, electron source,... Method of driving electron-emitting device, electron source,...

2007-09-04

2007-09-04

Chen, Shih-Chao (Department: 2821)

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

C445S024000

Reexamination Certificate

active

11057723

ABSTRACT:
Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.

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