Method of driving a semiconductor device

Details Method of driving a semiconductor device Method of driving a semiconductor device

2010-07-26

2011-12-27

Vu, Bao Q (Department: 2838)

Electricity: power supply or regulation systems

Input level responsive

Using a linearly acting final control device

C323S266000, C323S268000, C323S299000

Reexamination Certificate

active

08085028

ABSTRACT:
As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor.This invention provides an electric circuit which used a rectification type device in which an electric current is generated only in a single direction, when an electric potential difference was applied to electrodes at both ends of the device. Then, the invention provides an electric circuit which utilized a fact that, when a signal voltage is inputted to one terminal of the rectification type device, an electric potential of the other terminal becomes an electric potential offset only by the threshold voltage of the rectification type device.

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