Method of driving a light emitting device

Details Method of driving a light emitting device Method of driving a light emitting device

2003-04-30

2008-11-04

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S163000, C257SE21570

Reexamination Certificate

active

07445946

ABSTRACT:
The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |VDS| of the transistor is set equal to or larger than 1 V and equal to or less than |VGS−Vth|. The transistor is used as a resistor so that the resistance of a light emitting element can be held by the transistor. This slows down an increase in internal resistance of the light emitting element and the resultant current value reduction. Accordingly, a change with time in light emission luminance is reduced and the reliability is improved.

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