Method of doping, semiconductor device, and method of fabricatin

Details Method of doping, semiconductor device, and method of fabricatin Method of doping, semiconductor device, and method of fabricatin

1994-03-30

1996-09-17

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

In compound semiconductor material

257 14, 257 24, 257183, 257192, 257289, 257537, 257641, 257649, H01L 2358, H01L 2906, H01L 310328, H01L 2900

Patent

active

055571417

ABSTRACT:
A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

REFERENCES:
patent: 3733527 (1973-05-01), Migitaka et al.
patent: 3907616 (1975-09-01), Wiemer
patent: 4924285 (1990-05-01), Anderson et al.
patent: 5283445 (1994-02-01), Saito
ECR Plasma CVD Process (Extended abstracts of the 16th 1984 International Conference on Solid State Devices and Materials, Kobe, 1984, pp. 459-462).
N+ Doping Of Gallium Arsenide By Rapid Thermal Oxidation Of A Silicon Cap (Appl. Phys. Lett. 57 (16), 15 Oct. 1990--American Institute of Physics).
Diffusion Of Silicon In Gallium Arsenide Using Rapid Thermal Processing: Experiment And Model (Appl. Phys. Lett. 44(8), 15 Apr. 1984--American Institute of Physics).
Disorder-Defined Buried-Heterostructure Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers By Diffusion Of Silicon and Oxygen From Al-Reduced SiO.sub.2 (Appl. Phys. Lett. 54(13), 27 Mar. 1989--American Institute of Physics).
Closed-Tube Diffusion Of Silicon In GaAs From Sputtered Silicon Film (Electronics Letters, 24 Apr. 1986 vol. 22 No. 9).
Semiconductor Devices--Physics and Technology by S. M. Sze, Jan. 1985, p. 307.

Affiliated with

Also associated with

Rating

Method of doping, semiconductor device, and method of fabricatin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of doping, semiconductor device, and method of fabricatin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of doping, semiconductor device, and method of fabricatin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-415244