Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-02-01
2010-10-26
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51001, C257SE21001, C438S099000
Reexamination Certificate
active
07821000
ABSTRACT:
An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.
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Kloc Christian Leo
Ramirez Arthur Penn
So Woo-Young
Alcatel-Lucent USA Inc.
Hitt Gaines PC
Mandala Victor A
Moore Whitney
The Trustees of Columbia University
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