Method of doping metal layers for electromigration resistance

Details Method of doping metal layers for electromigration resistance Method of doping metal layers for electromigration resistance

1994-02-04

1997-10-28

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437194, 437188, 437246, 437140, H01L 2144, H01L 2148

Patent

active

056817797

ABSTRACT:
A method of doping metal layers on integrated circuits to provide electromigration resistance and integrated circuits having metal alloy interconnects characterized by being resistant to electromigration are provided. The process consists of the steps of (1) depositing a film of a pure first conductive metal upon a semiconductor, (2) patterning and etching the deposited film, (3) subjecting the patterned conductive metal film to metallo-organic chemical vapor deposition in order to deposit upon the first deposited metal and not upon any semiconductive areas present in the patterned conductive metal film a doping amount of a second conductive metal different from the first metal, and (4) heating at a temperature sufficient to uniformly diffuse the second metal through the bulk of the patterned first conductive metal film.

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